1.Use top quality (A-level) protective integrated circuit IC, from the solution of Seiko of Japan.
2.Strong load ability, constant discharge current 10A~250A, use high voltage resistance, low inner resistance power Mosfet. The heat sink will greatly help to cool.
3.IC itself has a power balancing function. The circuit is simple and reliable.
4.Typical voltage detection for each cell. So each battery will be prevented over charged or over-discharged. Over current and short circuit protection function is very reliable. long time short circuit of the load won’t affect the PCB and the battery. Temperature protection during charging and discharging.
5.Extreme low power consumption. the consumption of the whole device is less than 50uA.
6.PCB use high anti-corrosion, high water resistance, high impedance ESD conformal coating.
Specification as below:
| 13S 48V | Detail | Spec | |||||
| Discharge | Maximal Continuous Discharging Current | 10A | 15A | 20A | 30A | 40A | 60A |
| Peak Discharging Current | 30A | 50A | 60A | 100A | 180A | 180A | |
| Over Current Protection Current | 30A | 50A | 60A | 100A | 180A | 180A | |
| Charge | Charging Voltage | 12.6V | |||||
| Charging Current | 10A | 15A | 25A | 35A | 45A | 60A | |
| Overcharge protection | Over Charge Detection Voltage | 4.25±0.025V | |||||
| Over Charge Detection Delay Time | 0.5S | ||||||
| Over Charger Release Voltage | 4.19±0.05V | ||||||
| Cell balancing | Cell balancing Detection Voltage | 4.18V | |||||
| Cell balancing Release Voltage | 4.18V | ||||||
| Cell balancing Current | 35±5mA | ||||||
| Over-discharge protection | Over-Discharge Detection Voltage | 2.8±0.05V | |||||
| Over-Discharge Detection Delay Time | 0.5S | ||||||
| Over Discharger Release Voltage | 3.0±0.05V | ||||||
| Over-current protection | Over Current Detection Voltage | 150mV | |||||
| Over Current Detection Delay Time | 9MS | ||||||
| Over Current Protection Condition | Disconnect the load | ||||||
| Short Protection | Detection Condition | Exterior Short Circuit | |||||
| Detection Delay Time | 250uS | ||||||
| Release Condition | Disconnect the load | ||||||
| Temperature Protection | 65 degree or 75 degree | optional | |||||
| Internal Resistance | MOSFET | ≤10mΩ | |||||
